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Manufacturer | ROHM |
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Manufacturer's Part Number | DTDG14GPT100 |
Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; |
Datasheet | DTDG14GPT100 Datasheet |
NAME | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 80 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 1 A |
Maximum Time At Peak Reflow Temperature (s): | 10 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Sub-Category: | BIP General Purpose Small Signals |
Surface Mount: | YES |
Terminal Finish: | TIN COPPER |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 2 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-F3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Power Dissipation Ambient: | 2 W |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 300 |
JESD-609 Code: | e2 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 70 V |
Additional Features: | BUILT-IN BIAS RESISTOR |
Peak Reflow Temperature (C): | 260 |
Maximum VCEsat: | .4 V |