ROHM - EM6K34T2CR

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EM6K34T2CR by ROHM

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Manufacturer ROHM
Manufacturer's Part Number EM6K34T2CR
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Datasheet EM6K34T2CR Datasheet
NAME DESCRIPTION
Other Names: EM6K34T2CRCT
EM6K34T2CRTR
EM6K34T2CRDKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 3 pF
Maximum Drain Current (ID): .2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 50 V
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 2.8 ohm
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