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| Manufacturer | ROHM |
|---|---|
| Manufacturer's Part Number | IMD10AT108 |
| Description | NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; |
| Datasheet | IMD10AT108 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 250 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | BIP General Purpose Small Signals |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | NPN AND PNP |
| Minimum DC Current Gain (hFE): | 100 |
| JESD-609 Code: | e1 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| Peak Reflow Temperature (C): | 260 |
