QH8KA4TCR by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	QH8KA4TCR
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Terminal Form: FLAT; Maximum Pulsed Drain Current (IDM): 40 A;
Datasheet	QH8KA4TCR Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	9 A
Maximum Pulsed Drain Current (IDM):	40 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.017 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	6.2 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Peak Reflow Temperature (C):	260

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