QS5Y2FSTR by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	QS5Y2FSTR
Description	NPN AND PNP; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 320 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3 A;
Datasheet	QS5Y2FSTR Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	320 MHz
Other Names:	846-QS5Y2FSDKR 846-QS5Y2FSTR 846-QS5Y2FSCT
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	COMMON EMITTER, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	180
Terminal Finish:	TIN COPPER
JESD-609 Code:	e2
No. of Terminals:	5
Maximum Power Dissipation (Abs):	1.25 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum VCEsat:	.4 V
Maximum Power Dissipation Ambient:	.5 W

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