R6020FNJTL by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	R6020FNJTL
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 10; Maximum Drain-Source On Resistance: .28 ohm; No. of Elements: 1;
Datasheet	R6020FNJTL Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	26.7 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	80 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.28 ohm
Moisture Sensitivity Level (MSL):	1

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