ROHM - R6030ENX

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R6030ENX by ROHM

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Manufacturer ROHM
Manufacturer's Part Number R6030ENX
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 30 A; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON;
Datasheet R6030ENX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .13 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 636 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Peak Reflow Temperature (C): 260
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