ROHM - RD3H160SPFRATL

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RD3H160SPFRATL by ROHM

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Manufacturer ROHM
Manufacturer's Part Number RD3H160SPFRATL
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet RD3H160SPFRATL Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 32 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 45 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .05 ohm
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