ROHM - RD3L01BATTL1

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RD3L01BATTL1 by ROHM

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Manufacturer ROHM
Manufacturer's Part Number RD3L01BATTL1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
Datasheet RD3L01BATTL1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 26 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .084 ohm
Avalanche Energy Rating (EAS): 7.9 mJ
Maximum Feedback Capacitance (Crss): 105 pF
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
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