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| Manufacturer | ROHM |
|---|---|
| Manufacturer's Part Number | RF4C050APTR |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | RF4C050APTR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 10 A |
| Maximum Pulsed Drain Current (IDM): | 20 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .026 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
RF4C050APTRDKR RF4C050APTRDKR-ND RF4C050APCT RF4C050AP RF4C050AP-ND T2198597 RF4C050APTRCT RF4C050APTRCT-ND RF4C050APDKR Q7763030AZ |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 20 V |
| Peak Reflow Temperature (C): | 260 |









