RQ7L050ATTCR by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	RQ7L050ATTCR
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 10; Package Shape: RECTANGULAR;
Datasheet	RQ7L050ATTCR Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.044 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	4.4 mJ
Other Names:	846-RQ7L050ATTCRDKR 846-RQ7L050ATTCRCT 846-RQ7L050ATTCRTR
Maximum Feedback Capacitance (Crss):	135 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Peak Reflow Temperature (C):	260

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