ROHM - RQ7L050ATTCR

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RQ7L050ATTCR by ROHM

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Manufacturer ROHM
Manufacturer's Part Number RQ7L050ATTCR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 10; Package Shape: RECTANGULAR;
Datasheet RQ7L050ATTCR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .044 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 4.4 mJ
Maximum Feedback Capacitance (Crss): 135 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): 260
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