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Manufacturer | ROHM |
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Manufacturer's Part Number | RZF020P01TL |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; JESD-609 Code: e2; Transistor Application: SWITCHING; |
Datasheet | RZF020P01TL Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 10 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN COPPER |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .8 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .105 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e2 |
Minimum DS Breakdown Voltage: | 12 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 2 A |
Peak Reflow Temperature (C): | 260 |