SCT2280KEGC11 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	SCT2280KEGC11
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 108 W; Maximum Operating Temperature: 175 Cel; JEDEC-95 Code: TO-247;
Datasheet	SCT2280KEGC11 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	5 pF
Maximum Drain Current (ID):	14 A
JEDEC-95 Code:	TO-247
Maximum Pulsed Drain Current (IDM):	35 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	1200 V
Maximum Power Dissipation (Abs):	108 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.364 ohm

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