ROHM - SH8KA4TB

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SH8KA4TB by ROHM

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Manufacturer ROHM
Manufacturer's Part Number SH8KA4TB
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Maximum Drain-Source On Resistance: 21.4 ohm; No. of Terminals: 8;
Datasheet SH8KA4TB Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 4.6 mJ
Other Names: SH8KA4TBTR
SH8KA4TBCT
SH8KA4TBDKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 18 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: 21.4 ohm
Moisture Sensitivity Level (MSL): 1
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