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| Manufacturer | ROHM |
|---|---|
| Manufacturer's Part Number | UT6JA2TCR |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; JESD-609 Code: e3; |
| Datasheet | UT6JA2TCR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4 A |
| Maximum Pulsed Drain Current (IDM): | 12 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .103 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 6.5 mJ |
| Other Names: |
UT6JA2TCRDKR UT6JA2TCRCT UT6JA2TCRTR |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Peak Reflow Temperature (C): | 260 |
