ROHM - VT6M1T2CR

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VT6M1T2CR by ROHM

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Manufacturer ROHM
Manufacturer's Part Number VT6M1T2CR
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Transistor Application: SWITCHING; JESD-609 Code: e1; Transistor Element Material: SILICON;
Datasheet VT6M1T2CR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .1 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: 4.2 ohm
Moisture Sensitivity Level (MSL): 1
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