Samsung - 2N6518

2N6518 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number 2N6518
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
Datasheet 2N6518 Datasheet
In Stock892
NAME DESCRIPTION
Nominal Transition Frequency (fT): 40 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 200 ns
JEDEC-95 Code: TO-92
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 25
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .625 W
Maximum Collector-Emitter Voltage: 250 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 3.5 ns
JESD-30 Code: O-PBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 150 Cel
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