Image shown is a representation only.
| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | HMF03020 |
| Description | N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Operating Temperature: 250 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .125 W; |
| Datasheet | HMF03020 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Operating Temperature: | 250 Cel |
| Maximum Drain Current (ID): | .06 A |
| Maximum Drain Current (Abs) (ID): | .06 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | .125 W |









