Samsung - HMF03110-200

  1. Home
  2. Samsung - HMF03110-200
HMF03110-200 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number HMF03110-200
Description N-CHANNEL; Maximum Drain Current (ID): .04 A; Maximum Operating Temperature: 250 Cel; Maximum Drain Current (Abs) (ID): .04 A; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL SEMICONDUCTOR;
Datasheet HMF03110-200 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 250 Cel
Maximum Drain Current (ID): .04 A
Maximum Drain Current (Abs) (ID): .04 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC548 by Infineon Technologies

BC548

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP112 by General Electric Solid State

TIP112

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BD139 by Tesla Elektronicke Soucastky

BD139

Tesla Elektronicke Soucastky

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP127 by General Electric Solid State

TIP127

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP112 by Intersil

TIP112

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP110 by Thomson Consumer Electronics

TIP110

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
BC337-16 by Tt Electronics Plc

BC337-16

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100;
BC337-40 by Itt Components

BC337-40

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC548C by Weitron Technology

BC548C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BFT92W/A2,115 by NXP Semiconductors

BFT92W/A2,115

NXP Semiconductors

The NXP Semiconductors BFT92W/A2,115 is a PNP transistor with a single configuration and surface mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20 (hFE), and max operating temp of 150°C. Ideal for low-power applications in electronics requiring precise signal amplification.
BC547C by North American Philips Discrete Products Div

BC547C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222AUA by New England Semiconductor

2N2222AUA

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847 by North American Philips Discrete Products Div

BC847

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC546B by North American Philips Discrete Products Div

BC546B

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC548C by Bharat Electronics

BC548C

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
FDN360P-F095 by Fairchild Semiconductor

FDN360P-F095

Fairchild Semiconductor

FDN360P-F095 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 2A and power dissipation of 0.5W. It operates in enhancement mode, suitable for surface mount applications in electronics requiring high temperature resistance up to 150°C.
BSR14 by National Semiconductor

BSR14

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
BC847B by Jiangsu Changjiang Electronics Technology

BC847B

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
D44H11 by General Electric Solid State

D44H11

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BC337-40 by Weitron Technology

BC337-40

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;