Samsung - HMF03110-200

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HMF03110-200 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number HMF03110-200
Description N-CHANNEL; Maximum Drain Current (ID): .04 A; Maximum Operating Temperature: 250 Cel; Maximum Drain Current (Abs) (ID): .04 A; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL SEMICONDUCTOR;
Datasheet HMF03110-200 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 250 Cel
Maximum Drain Current (ID): .04 A
Maximum Drain Current (Abs) (ID): .04 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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