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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | HMF0602 |
| Description | N-CHANNEL; Maximum Drain Current (ID): .2 A; Maximum Power Dissipation Ambient: 1.9 W; Maximum Operating Temperature: 180 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .2 A; |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Operating Temperature: | 180 Cel |
| Maximum Drain Current (ID): | .2 A |
| Maximum Drain Current (Abs) (ID): | .2 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | 1.9 W |
