Samsung - HMF0602

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HMF0602 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number HMF0602
Description N-CHANNEL; Maximum Drain Current (ID): .2 A; Maximum Power Dissipation Ambient: 1.9 W; Maximum Operating Temperature: 180 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .2 A;
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 180 Cel
Maximum Drain Current (ID): .2 A
Maximum Drain Current (Abs) (ID): .2 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: 1.9 W
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