IRF624A by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	IRF624A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; JEDEC-95 Code: TO-220AB; Maximum Operating Temperature: 150 Cel;
Datasheet	IRF624A Datasheet
In Stock	894

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	4.1 A
Maximum Pulsed Drain Current (IDM):	16 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	49 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.1 ohm
Avalanche Energy Rating (EAS):	84 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	4.1 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
894	-	-

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