IRFP443 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	IRFP443
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
Datasheet	IRFP443 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	56 ns
Maximum Drain Current (ID):	7 A
Maximum Pulsed Drain Current (IDM):	28 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	104 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	125 W
Maximum Drain-Source On Resistance:	1.1 ohm
Avalanche Energy Rating (EAS):	510 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	450 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	7.1 A

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