Samsung - K1B5616B2M000000

K1B5616B2M000000 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K1B5616B2M000000
Description PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; Package Code: DIE; Package Shape: RECTANGULAR; Memory Density: 268435456 bit; Memory Width: 16;
Datasheet K1B5616B2M000000 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 16MX16
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
No. of Words: 16777216 words
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
Technology: CMOS
JESD-30 Code: R-XUUC-N
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIE
Memory Density: 268435456 bit
Memory IC Type: PSEUDO STATIC RAM
Minimum Operating Temperature: -40 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Maximum Access Time: 70 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 1.8
Parallel or Serial: PARALLEL
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 2 V
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