Samsung - K1S321615M-EE10

K1S321615M-EE10 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K1S321615M-EE10
Description PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00002 Amp;
Datasheet K1S321615M-EE10 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .00002 Amp
Organization: 2MX16
Output Characteristics: 3-STATE
Maximum Seated Height: 1 mm
Minimum Supply Voltage (Vsup): 2.7 V
Sub-Category: Other Memory ICs
Surface Mount: YES
Maximum Supply Current: 25 mA
No. of Terminals: 48
No. of Words: 2097152 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B48
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: VFBGA
Width: 9 mm
Input/Output Type: COMMON
Memory Density: 33554432 bit
Memory IC Type: PSEUDO STATIC RAM
Minimum Operating Temperature: -25 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: BGA48,6X8,30
Length: 12 mm
Maximum Access Time: 100 ns
No. of Words Code: 2M
Nominal Supply Voltage / Vsup (V): 3
Parallel or Serial: PARALLEL
Terminal Pitch: .75 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 3.3 V
Power Supplies (V): 3
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