Samsung - K4E661612D-TP600

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K4E661612D-TP600 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4E661612D-TP600
Description EDO DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 50; Package Code: TSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4E661612D-TP600 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .0002 Amp
Organization: 4MX16
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 110 mA
No. of Terminals: 50
No. of Words: 4194304 words
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE, THIN PROFILE
Technology: CMOS
JESD-30 Code: R-PDSO-G50
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 85 Cel
Package Code: TSOP
Moisture Sensitivity Level (MSL): 1
Input/Output Type: COMMON
Memory Density: 67108864 bit
Self Refresh: YES
Memory IC Type: EDO DRAM
Minimum Operating Temperature: -40 Cel
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: TSOP50,.46,32
Refresh Cycles: 8192
Maximum Access Time: 60 ns
No. of Words Code: 4M
Nominal Supply Voltage / Vsup (V): 3.3
Terminal Pitch: .8 mm
Temperature Grade: INDUSTRIAL
Power Supplies (V): 3.3
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