K4H510838D-ZPB3T by Samsung | Memory ICs

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Manufacturer	Samsung
Manufacturer's Part Number	K4H510838D-ZPB3T
Description	DDR1 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 60; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet	K4H510838D-ZPB3T Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.005 Amp
Organization:	64MX8
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	360 mA
Terminal Finish:	MATTE TIN
No. of Terminals:	60
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	67108864 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Technology:	CMOS
JESD-30 Code:	R-PBGA-B60
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Maximum Operating Temperature:	125 Cel
Package Code:	BGA
Moisture Sensitivity Level (MSL):	1
Input/Output Type:	COMMON
Memory Density:	536870912 bit
Sequential Burst Length:	2,4,8
Memory IC Type:	DDR1 DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	BGA60,9X12,40/32
Refresh Cycles:	8192
Interleaved Burst Length:	2,4,8
Maximum Access Time:	.7 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	2.5
Terminal Pitch:	.8 mm
Temperature Grade:	AUTOMOTIVE
Power Supplies (V):	2.5

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