Samsung - K4H511638B-GCCC

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K4H511638B-GCCC by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4H511638B-GCCC
Description DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4H511638B-GCCC Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .005 Amp
Organization: 32MX16
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 450 mA
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 60
Maximum Clock Frequency (fCLK): 200 MHz
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
JESD-30 Code: R-PBGA-B60
Package Shape: RECTANGULAR
Terminal Form: BALL
Maximum Operating Temperature: 70 Cel
Package Code: BGA
Input/Output Type: COMMON
Memory Density: 536870912 bit
Sequential Burst Length: 2,4,8
Memory IC Type: DDR1 DRAM
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: BGA60,9X12,40/32
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8
Maximum Access Time: .65 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 2.6
Terminal Pitch: .8 mm
Temperature Grade: COMMERCIAL
Power Supplies (V): 2.6
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