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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4H561638H-UCB3 |
| Description | DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4H561638H-UCB3 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .003 Amp |
| Organization: | 16MX16 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 330 mA |
| Terminal Finish: | TIN BISMUTH |
| No. of Terminals: | 66 |
| Maximum Clock Frequency (fCLK): | 166 MHz |
| No. of Words: | 16777216 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PDSO-G66 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 70 Cel |
| Package Code: | TSSOP |
| Moisture Sensitivity Level (MSL): | 3 |
| Input/Output Type: | COMMON |
| Memory Density: | 268435456 bit |
| Sequential Burst Length: | 2,4,8 |
| Memory IC Type: | DDR1 DRAM |
| JESD-609 Code: | e6 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 16 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | TSSOP66,.46 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 2,4,8 |
| Maximum Access Time: | .7 ns |
| No. of Words Code: | 16M |
| Nominal Supply Voltage / Vsup (V): | 2.3 |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | .635 mm |
| Temperature Grade: | COMMERCIAL |
| Power Supplies (V): | 2.3 |
