Samsung - K4J52324QH-HJ1A0

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K4J52324QH-HJ1A0 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4J52324QH-HJ1A0
Description GDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 136; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4J52324QH-HJ1A0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.5 V
Sub-Category: DRAMs
Surface Mount: YES
Technology: CMOS
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: TFBGA
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
No. of Ports: 1
Self Refresh: YES
Sequential Burst Length: 4,8
Memory Width: 32
Qualification: Not Qualified
Package Equivalence Code: BGA136,12X17,32
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Maximum Standby Current: .085 Amp
Organization: 16MX32
Output Characteristics: 3-STATE
Maximum Seated Height: 1.2 mm
Maximum Supply Current: 960 mA
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 136
Maximum Clock Frequency (fCLK): 1000 MHz
No. of Words: 16777216 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code: R-PBGA-B136
Maximum Operating Temperature: 85 Cel
Width: 10 mm
Memory Density: 536870912 bit
Memory IC Type: GDDR3 DRAM
JESD-609 Code: e1
Minimum Operating Temperature: 0 Cel
No. of Functions: 1
Refresh Cycles: 8192
Interleaved Burst Length: 4,8
Length: 14 mm
Maximum Access Time: .2 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 1.9
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 2 V
Power Supplies (V): 1.9
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