Samsung - K4M28163LF-RN1H0

K4M28163LF-RN1H0 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4M28163LF-RN1H0
Description SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 16;
Datasheet K4M28163LF-RN1H0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 8MX16
Maximum Seated Height: 1 mm
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 2.3 V
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 54
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: S-PBGA-B54
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: VFBGA
Width: 8 mm
No. of Ports: 1
Memory Density: 134217728 bit
Self Refresh: YES
Memory IC Type: SYNCHRONOUS DRAM
JESD-609 Code: e0
Minimum Operating Temperature: -25 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Length: 8 mm
Maximum Access Time: 7 ns
No. of Words Code: 8M
Nominal Supply Voltage / Vsup (V): 2.5
Additional Features: AUTO/SELF REFRESH
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 2.7 V
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