Samsung - K4M511633C-RL1H0

K4M511633C-RL1H0 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4M511633C-RL1H0
Description SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -25 Cel;
Datasheet K4M511633C-RL1H0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 32MX16
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Seated Height: 1 mm
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 2.7 V
Surface Mount: YES
No. of Terminals: 54
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B54
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: VFBGA
Width: 10 mm
No. of Ports: 1
Memory Density: 536870912 bit
Self Refresh: YES
Memory IC Type: SYNCHRONOUS DRAM
Minimum Operating Temperature: -25 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Length: 11.5 mm
Maximum Access Time: 7 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 3
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 240
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 3.6 V
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