Samsung - K4M51323LC-DN75T

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K4M51323LC-DN75T by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4M51323LC-DN75T
Description SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL EXTENDED; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4M51323LC-DN75T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 2.3 V
Sub-Category: DRAMs
Surface Mount: YES
Technology: CMOS
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: VFBGA
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
No. of Ports: 1
Self Refresh: YES
Sequential Burst Length: 1,2,4,8,FP
Memory Width: 32
Qualification: Not Qualified
Package Equivalence Code: BGA90,9X15,32
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Maximum Standby Current: .001 Amp
Organization: 16MX32
Output Characteristics: 3-STATE
Maximum Seated Height: 1 mm
Maximum Supply Current: 110 mA
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 90
Maximum Clock Frequency (fCLK): 133 MHz
No. of Words: 16777216 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
JESD-30 Code: R-PBGA-B90
Maximum Operating Temperature: 85 Cel
Width: 11 mm
Memory Density: 536870912 bit
Memory IC Type: SYNCHRONOUS DRAM
JESD-609 Code: e1
Minimum Operating Temperature: -25 Cel
No. of Functions: 1
Refresh Cycles: 8192
Interleaved Burst Length: 1,2,4,8
Length: 13 mm
Maximum Access Time: 5.4 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 2.5
Temperature Grade: COMMERCIAL EXTENDED
Maximum Supply Voltage (Vsup): 2.7 V
Power Supplies (V): 2.5
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