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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4M561633G-RG75T |
| Description | SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4M561633G-RG75T Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .001 Amp |
| Organization: | 16MX16 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 2.7 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 120 mA |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 54 |
| Maximum Clock Frequency (fCLK): | 133 MHz |
| No. of Words: | 16777216 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B54 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | VFBGA |
| Width: | 8 mm |
| Moisture Sensitivity Level (MSL): | 1 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 268435456 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 1,2,4,8,FP |
| Memory IC Type: | SYNCHRONOUS DRAM |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA54,9X9,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 1,2,4,8 |
| Length: | 11 mm |
| Maximum Access Time: | 5.4 ns |
| No. of Words Code: | 16M |
| Nominal Supply Voltage / Vsup (V): | 3 |
| Additional Features: | AUTO/SELF REFRESH |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 3.6 V |
| Power Supplies (V): | 3/3.3 |
