Samsung - K4M563233G-HG75T

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K4M563233G-HG75T by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4M563233G-HG75T
Description SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet K4M563233G-HG75T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .001 Amp
Organization: 8MX32
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 160 mA
Terminal Finish: MATTE TIN
No. of Terminals: 90
Maximum Clock Frequency (fCLK): 133 MHz
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B90
Package Shape: RECTANGULAR
Terminal Form: BALL
Maximum Operating Temperature: 85 Cel
Package Code: FBGA
Moisture Sensitivity Level (MSL): 1
Input/Output Type: COMMON
Memory Density: 268435456 bit
Sequential Burst Length: 1,2,4,8,FP
Memory IC Type: SYNCHRONOUS DRAM
JESD-609 Code: e3
Minimum Operating Temperature: -25 Cel
Memory Width: 32
Qualification: Not Qualified
Package Equivalence Code: BGA90,9X15,32
Refresh Cycles: 4096
Interleaved Burst Length: 1,2,4,8
Maximum Access Time: 5.4 ns
No. of Words Code: 8M
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Power Supplies (V): 3/3.3
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