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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4R271669E-TCS8 |
| Description | RAMBUS DRAM; No. of Terminals: 54; Package Code: LBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Self Refresh: YES; |
| Datasheet | K4R271669E-TCS8 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 8MX16 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.25 mm |
| Access Mode: | BLOCK ORIENTED PROTOCOL |
| Minimum Supply Voltage (Vsup): | 2.37 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| No. of Terminals: | 54 |
| Maximum Clock Frequency (fCLK): | 800 MHz |
| No. of Words: | 8388608 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, LOW PROFILE |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B54 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Package Code: | LBGA |
| Width: | 11.8 mm |
| Moisture Sensitivity Level (MSL): | 3 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 134217728 bit |
| Self Refresh: | YES |
| Memory IC Type: | RAMBUS DRAM |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA54,7X9,50 |
| Refresh Cycles: | 16384 |
| Length: | 12 mm |
| No. of Words Code: | 8M |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | SELF CONTAINED REFRESH |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | 1.27 mm |
| Maximum Supply Voltage (Vsup): | 2.63 V |
| Power Supplies (V): | 1.8/2.5,2.5 |
