Samsung - K4R271669F-TCS80

K4R271669F-TCS80 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4R271669F-TCS80
Description RAMBUS DRAM; No. of Terminals: 54; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 16; Organization: 8MX16;
Datasheet K4R271669F-TCS80 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 8MX16
Maximum Seated Height: 1.25 mm
Access Mode: BLOCK ORIENTED PROTOCOL
Minimum Supply Voltage (Vsup): 2.37 V
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 54
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, LOW PROFILE
Technology: CMOS
JESD-30 Code: R-PBGA-B54
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: LBGA
Width: 11.8 mm
Moisture Sensitivity Level (MSL): 2
No. of Ports: 1
Memory Density: 134217728 bit
Self Refresh: YES
Memory IC Type: RAMBUS DRAM
JESD-609 Code: e1
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Length: 12 mm
No. of Words Code: 8M
Nominal Supply Voltage / Vsup (V): 2.5
Additional Features: SELF CONTAINED REFRESH
Terminal Pitch: 1.27 mm
Maximum Supply Voltage (Vsup): 2.63 V
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