Samsung - K4R881869E-FCK80

K4R881869E-FCK80 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4R881869E-FCK80
Description RAMBUS DRAM; No. of Terminals: 92; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 301989888 bit; No. of Words: 16777216 words;
Datasheet K4R881869E-FCK80 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 16MX18
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Seated Height: 1 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 2.37 V
Surface Mount: YES
No. of Terminals: 92
No. of Words: 16777216 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B92
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: VFBGA
Width: 9.3 mm
No. of Ports: 1
Memory Density: 301989888 bit
Self Refresh: YES
Memory IC Type: RAMBUS DRAM
Memory Width: 18
No. of Functions: 1
Qualification: Not Qualified
Length: 15.1 mm
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 2.5
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 240
Terminal Pitch: .8 mm
Maximum Supply Voltage (Vsup): 2.63 V
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