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Manufacturer | Samsung |
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Manufacturer's Part Number | K4R881869E-GCN1 |
Description | RAMBUS DRAM; No. of Terminals: 92; Package Code: FBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, FINE PITCH; Peak Reflow Temperature (C): 260; |
Datasheet | K4R881869E-GCN1 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Organization: | 16MX18 |
Output Characteristics: | 3-STATE |
Sub-Category: | DRAMs |
Surface Mount: | YES |
Maximum Supply Current: | 830 mA |
No. of Terminals: | 92 |
Maximum Clock Frequency (fCLK): | 1200 MHz |
No. of Words: | 16777216 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, FINE PITCH |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B92 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Package Code: | FBGA |
Moisture Sensitivity Level (MSL): | 3 |
Input/Output Type: | COMMON |
Memory Density: | 301989888 bit |
Memory IC Type: | RAMBUS DRAM |
Memory Width: | 18 |
Qualification: | Not Qualified |
Package Equivalence Code: | BGA92,10X18,32 |
Maximum Access Time: | 32 ns |
No. of Words Code: | 16M |
Peak Reflow Temperature (C): | 260 |
Terminal Pitch: | .8 mm |
Power Supplies (V): | 1.8/2.5,2.5 |