Samsung - K4S1G0632M-TC1H0

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K4S1G0632M-TC1H0 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4S1G0632M-TC1H0
Description SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet K4S1G0632M-TC1H0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 256MX4
Maximum Time At Peak Reflow Temperature (s): 30
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 3 V
Surface Mount: YES
No. of Terminals: 54
No. of Words: 268435456 words
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Technology: CMOS
JESD-30 Code: R-PDSO-G54
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: SOP
No. of Ports: 1
Memory Density: 1073741824 bit
Self Refresh: YES
Memory IC Type: SYNCHRONOUS DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 4
No. of Functions: 1
Qualification: Not Qualified
Maximum Access Time: 6 ns
No. of Words Code: 256M
Nominal Supply Voltage / Vsup (V): 3.3
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 240
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 3.6 V
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