Samsung - K4S560432B-TC/L1H

  1. Home
  2. Samsung - K4S560432B-TC/L1H
K4S560432B-TC/L1H by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K4S560432B-TC/L1H
Description DRAMs;
Datasheet K4S560432B-TC/L1H Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MT53D512M32D2DS-046AIT:D by Micron Technology

MT53D512M32D2DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
MT41K512M16HA-125:A by Micron Technology

MT41K512M16HA-125:A

Micron Technology

Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.
MTA36ASF4G72PZ-2G3B1 by Micron Technology

MTA36ASF4G72PZ-2G3B1

Micron Technology

Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.
KVR16LN11/4 by Kingston Technology Company

KVR16LN11/4

Kingston Technology Company

Kingston's KVR16LN11/4 DDR DRAM module operates synchronously at 1.35V, with 512MX64 organization and 64-bit memory width. Ideal for applications requiring high memory density and multi-bank page burst access mode in microelectronic assemblies.
MT47H64M16HR-25EIT:HTR by Micron Technology

MT47H64M16HR-25EIT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.4ns, and multi-bank page burst access mode.
M368L2923DUN-CCC by Samsung

M368L2923DUN-CCC

Samsung

Samsung M368L2923DUN-CCC is a 128MX64 DDR DRAM MODULE with 184 terminals. It operates synchronously at up to 200 MHz, offering a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing and storage in commercial-grade environments.
AS4C256M16D4-75BCN by Alliance Memory

AS4C256M16D4-75BCN

Alliance Memory

Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
MT48LC16M16A2P-7E:D by Micron Technology

MT48LC16M16A2P-7E:D

Micron Technology

Micron Technology's MT48LC16M16A2P-7E:D is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz, has a memory density of 268435456 bit, and supports a max clock frequency of 143 MHz. Ideal for applications requiring fast data access and storage in commercial-grade environments.
MT41K128M16JT-125:K by Micron Technology

MT41K128M16JT-125:K

Micron Technology

MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16HR-3IT:G by Micron Technology

MT47H64M16HR-3IT:G

Micron Technology

Micron Technology's MT47H64M16HR-3IT:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS42S16160G-7TLI by Integrated Silicon Solution

IS42S16160G-7TLI

Integrated Silicon Solution

IS42S16160G-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast memory access and low power consumption.
M391T6553CZ3-CD5 by Samsung

M391T6553CZ3-CD5

Samsung

Samsung M391T6553CZ3-CD5 DDR DRAM Module has 64MX72 organization, operates at 267 MHz with 1.8V supply. Ideal for high-performance computing applications due to its synchronous operation and 72-bit memory width.
MT48LC8M16A2TG-75IT:G by Micron Technology

MT48LC8M16A2TG-75IT:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:G is a 3.3V, 8MX16 Synchronous DRAM with 133MHz clock frequency and -40 to 85°C operating range. Ideal for industrial applications, it features a small outline package, common I/O type, and self-refresh capability.
MT40A1G16KH-062EAUT:E by Micron Technology

MT40A1G16KH-062EAUT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
M393B1K70DH0-CK0 by Samsung

M393B1K70DH0-CK0

Samsung

Samsung's M393B1K70DH0-CK0 is a 1GX72 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.5V, it offers 1073741824 words memory capacity and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
AS4C256M16D4-83BCN by Alliance Memory

AS4C256M16D4-83BCN

Alliance Memory

Alliance Memory's AS4C256M16D4-83BCN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply voltage. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC2M32B2P-6AIT:JTR by Micron Technology

MT48LC2M32B2P-6AIT:JTR

Micron Technology

Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.
MT48LC32M16A2P-75IT:CTR by Micron Technology

MT48LC32M16A2P-75IT:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.
M378T5663RZ3-CF7 by Samsung

M378T5663RZ3-CF7

Samsung

Samsung M378T5663RZ3-CF7 DDR DRAM with 256MX8 organization, 400 MHz clock frequency, and 1.8V supply voltage is ideal for high-speed computing applications. Featuring synchronous operation and self-refresh capability, it offers efficient performance in dual bank page burst access mode.
M378A1K43CB2-CRC by Samsung

M378A1K43CB2-CRC

Samsung

Samsung M378A1K43CB2-CRC DDR4 DRAM Module features 1GX64 organization, operates at 1200 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring synchronous operation and common I/O type with self-refresh capability.