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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4S563233F-FE1H0 |
| Description | SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: TFBGA; Package Shape: RECTANGULAR; Organization: 8MX32; |
| Datasheet | K4S563233F-FE1H0 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 8MX32 |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 2.7 V |
| Surface Mount: | YES |
| No. of Terminals: | 90 |
| No. of Words: | 8388608 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B90 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | TFBGA |
| Width: | 8 mm |
| No. of Ports: | 1 |
| Memory Density: | 268435456 bit |
| Self Refresh: | YES |
| Memory IC Type: | SYNCHRONOUS DRAM |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 32 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Length: | 13 mm |
| Maximum Access Time: | 7 ns |
| No. of Words Code: | 8M |
| Nominal Supply Voltage / Vsup (V): | 3 |
| Additional Features: | AUTO/SELF REFRESH |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 3.6 V |
