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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4T2G044QA-HLE70 |
| Description | DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 68; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4T2G044QA-HLE70 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .008 Amp |
| Organization: | 512MX4 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 350 mA |
| No. of Terminals: | 68 |
| Maximum Clock Frequency (fCLK): | 400 MHz |
| No. of Words: | 536870912 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B68 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Maximum Operating Temperature: | 95 Cel |
| Package Code: | FBGA |
| Input/Output Type: | COMMON |
| Memory Density: | 2147483648 bit |
| Sequential Burst Length: | 4,8 |
| Memory IC Type: | DDR2 DRAM |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 4 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA68,9X19,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 4,8 |
| Maximum Access Time: | .4 ns |
| No. of Words Code: | 512M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Power Supplies (V): | 1.8 |
