Samsung - K4T51163QC-ZLE6T

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K4T51163QC-ZLE6T by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4T51163QC-ZLE6T
Description DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4T51163QC-ZLE6T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .005 Amp
Organization: 32MX16
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 270 mA
No. of Terminals: 84
Maximum Clock Frequency (fCLK): 333 MHz
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B84
Package Shape: RECTANGULAR
Terminal Form: BALL
Maximum Operating Temperature: 95 Cel
Package Code: FBGA
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
Memory Density: 536870912 bit
Sequential Burst Length: 4,8
Memory IC Type: DDR2 DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: BGA84,9X15,32
Refresh Cycles: 8192
Interleaved Burst Length: 4,8
Maximum Access Time: .45 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 1.8
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Power Supplies (V): 1.8
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