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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4T51163QE-ZCE70 |
| Description | DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4T51163QE-ZCE70 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .008 Amp |
| Organization: | 32MX16 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.7 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 280 mA |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 84 |
| Maximum Clock Frequency (fCLK): | 400 MHz |
| No. of Words: | 33554432 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B84 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 95 Cel |
| Package Code: | TFBGA |
| Width: | 9 mm |
| Moisture Sensitivity Level (MSL): | 2 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 536870912 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 4,8 |
| Memory IC Type: | DDR2 DRAM |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA90,9X15,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 4,8 |
| Length: | 13 mm |
| Maximum Access Time: | .4 ns |
| No. of Words Code: | 32M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Additional Features: | AUTO/SELF REFRESH |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 1.9 V |
| Power Supplies (V): | 1.8 |
