Samsung - K4V1G323PC-SGC6T

  1. Home
  2. Samsung - K4V1G323PC-SGC6T
K4V1G323PC-SGC6T by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K4V1G323PC-SGC6T
Description DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 152; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: SQUARE;
Datasheet K4V1G323PC-SGC6T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .0006 Amp
Organization: 32MX32
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 180 mA
No. of Terminals: 152
Maximum Clock Frequency (fCLK): 166 MHz
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: S-PBGA-B152
Package Shape: SQUARE
Terminal Form: BALL
Maximum Operating Temperature: 85 Cel
Package Code: FBGA
Moisture Sensitivity Level (MSL): 1
Input/Output Type: COMMON
Memory Density: 1073741824 bit
Sequential Burst Length: 2,4,8,16
Memory IC Type: DDR1 DRAM
Minimum Operating Temperature: -25 Cel
Memory Width: 32
Qualification: Not Qualified
Package Equivalence Code: BGA152,21X21,25
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8,16
Maximum Access Time: 5.5 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 1.8
Terminal Pitch: .635 mm
Temperature Grade: OTHER
Power Supplies (V): 1.8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AS4C512M8D4-75BCN by Alliance Memory

AS4C512M8D4-75BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
IS42S16160J-7BLI by Integrated Silicon Solution

IS42S16160J-7BLI

Integrated Silicon Solution

IS42S16160J-7BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16M words code. It operates at 3.3V, has a memory density of 268435456 bits, and offers a max access time of 7ns. Ideal for industrial applications requiring high-speed memory solutions in compact form factors.
IS43QR16256B-083RBLI-TR by Integrated Silicon Solution

IS43QR16256B-083RBLI-TR

Integrated Silicon Solution

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common input/output type. Ideal for industrial applications requiring high memory density and fast data processing.
IS42S32800J-7BL-TR by Integrated Silicon Solution

IS42S32800J-7BL-TR

Integrated Silicon Solution

IS42S32800J-7BL-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a memory width of 32 bits, and offers a max access time of 5.4ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
MT41K128M16JT-107IT:KTR by Micron Technology

MT41K128M16JT-107IT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
S27KS0642GABHI020 by Infineon Technologies

S27KS0642GABHI020

Infineon Technologies

Infineon's S27KS0642GABHI020 DRAM features 8MX8 organization, operates at 200 MHz, and has a memory density of 67108864 bit. Suitable for applications requiring synchronous operation and common I/O type in a compact grid array package with very thin profile.
MT40A1G8SA-075:E by Micron Technology

MT40A1G8SA-075:E

Micron Technology

MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.
MT40A256M16GE-083E:B by Micron Technology

MT40A256M16GE-083E:B

Micron Technology

Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
IS42S16400J-7TLI-TR by Integrated Silicon Solution

IS42S16400J-7TLI-TR

Integrated Silicon Solution

IS42S16400J-7TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a small outline package suitable for industrial applications requiring fast access times and common I/O type.
IS42S32800J-7BLI by Integrated Silicon Solution

IS42S32800J-7BLI

Integrated Silicon Solution

IS42S32800J-7BLI by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at a max frequency of 143 MHz. Ideal for industrial applications requiring fast memory access and common I/O type in a compact GRID ARRAY package.
K4S641632K-UC60 by Samsung

K4S641632K-UC60

Samsung

Samsung's K4S641632K-UC60 is a 4MX16 DRAM with 3.3V supply, operating at 166MHz. It features synchronous operation, self-refresh capability, and a small outline package shape. Ideal for applications requiring high-speed memory access in commercial temperature environments.
IS42S16320D-7TL by Integrated Silicon Solution

IS42S16320D-7TL

Integrated Silicon Solution

IS42S16320D-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features self-refresh and common I/O type, suitable for applications requiring fast memory access in commercial temperature environments.
W9825G6KH-6I by Winbond Electronics

W9825G6KH-6I

Winbond Electronics

W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
KM44C256AP-8 by Samsung

KM44C256AP-8

Samsung

Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.
MT40A1G8WE-075E:B by Micron Technology

MT40A1G8WE-075E:B

Micron Technology

Micron Technology's MT40A1G8WE-075E:B is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H128M8SH-25E:M by Micron Technology

MT47H128M8SH-25E:M

Micron Technology

Micron Technology's MT47H128M8SH-25E:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features a common I/O type, self-refresh capability, and synchronous mode. Ideal for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.
M378T2863RZS-CE6 by Samsung

M378T2863RZS-CE6

Samsung

Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
MT47H32M16NF-25EIT:HTR by Micron Technology

MT47H32M16NF-25EIT:HTR

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
S70KS1282GABHB020 by Cypress Semiconductor

S70KS1282GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Memory Width: 8;