Samsung - K4W2G1646C-HC1A0

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K4W2G1646C-HC1A0 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4W2G1646C-HC1A0
Description DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;
Datasheet K4W2G1646C-HC1A0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 128MX16
Maximum Seated Height: 1.2 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.425 V
Surface Mount: YES
No. of Terminals: 96
No. of Words: 134217728 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B96
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 95 Cel
Package Code: TFBGA
Width: 7.5 mm
No. of Ports: 1
Memory Density: 2147483648 bit
Self Refresh: YES
Memory IC Type: DDR3 DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Length: 13.3 mm
Maximum Access Time: .18 ns
No. of Words Code: 128M
Nominal Supply Voltage / Vsup (V): 1.5
Additional Features: AUTO/SELF REFRESH
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 1.575 V
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