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Manufacturer | Samsung |
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Manufacturer's Part Number | K4W2G1646E-BC110 |
Description | DDR SRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96; |
Datasheet | K4W2G1646E-BC110 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Organization: | 128MX16 |
Maximum Seated Height: | 1.2 mm |
Minimum Supply Voltage (Vsup): | 1.425 V |
Surface Mount: | YES |
No. of Terminals: | 96 |
No. of Words: | 134217728 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B96 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 85 Cel |
Package Code: | TFBGA |
Width: | 7.5 mm |
Memory Density: | 2147483648 bit |
Memory IC Type: | DDR SRAM |
Minimum Operating Temperature: | 0 Cel |
Memory Width: | 16 |
No. of Functions: | 1 |
Length: | 13.3 mm |
No. of Words Code: | 128M |
Nominal Supply Voltage / Vsup (V): | 1.5 |
Parallel or Serial: | PARALLEL |
Terminal Pitch: | .8 mm |
Temperature Grade: | OTHER |
Maximum Supply Voltage (Vsup): | 1.575 V |