Samsung - K4X28163PH-W100

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K4X28163PH-W100 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4X28163PH-W100
Description DDR1 DRAM; Refresh Cycles: 4096; Maximum Access Time: 8 ns; Memory Density: 134217728 bit; Memory Width: 16; Package Equivalence Code: WAFER;
Datasheet K4X28163PH-W100 Datasheet
NAME DESCRIPTION
Input/Output Type: COMMON
Memory Density: 134217728 bit
Maximum Standby Current: .00001 Amp
Organization: 8MX16
Output Characteristics: 3-STATE
Sequential Burst Length: 2,4,8,16
Sub-Category: DRAMs
Maximum Supply Current: 100 mA
Memory IC Type: DDR1 DRAM
Memory Width: 16
Maximum Clock Frequency (fCLK): 133 MHz
No. of Words: 8388608 words
Qualification: Not Qualified
Package Equivalence Code: WAFER
Refresh Cycles: 4096
Interleaved Burst Length: 2,4,8,16
Technology: CMOS
Maximum Access Time: 8 ns
No. of Words Code: 8M
Nominal Supply Voltage / Vsup (V): 1.8
Power Supplies (V): 1.8
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