Samsung - K5Q5764G0M-F018

K5Q5764G0M-F018 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K5Q5764G0M-F018
Description MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 111; Package Code: LFBGA; Package Shape: RECTANGULAR; Mixed Memory Type: FLASH+PSRAM;
Datasheet K5Q5764G0M-F018 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .00005 Amp
Organization: 16MX16
Maximum Seated Height: 1.4 mm
Minimum Supply Voltage (Vsup): 1.7 V
Sub-Category: Other Memory ICs
Surface Mount: YES
Maximum Supply Current: 45 mA
No. of Terminals: 111
No. of Words: 16777216 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B111
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: LFBGA
Width: 10 mm
Memory Density: 268435456 bit
Mixed Memory Type: FLASH+PSRAM
Memory IC Type: MEMORY CIRCUIT
Minimum Operating Temperature: -25 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: BGA111,12X13,32
Length: 11 mm
Maximum Access Time: 85 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: UTRAM IS ORGANIZED AS 4M X 16
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 1.95 V
Power Supplies (V): 1.8/3
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