Samsung - K6E1008C1B-S20

  1. Home
  2. Samsung - K6E1008C1B-S20
K6E1008C1B-S20 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K6E1008C1B-S20
Description SRAMs;
Datasheet K6E1008C1B-S20 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.
23A1024-I/ST by Microchip Technology

23A1024-I/ST

Microchip Technology

23A1024-I/ST by Microchip Technology is a 128Kx8 SRAM with 131072 words, operating at 1.8/2V. It has a max clock frequency of 20MHz and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring fast synchronous memory access in compact designs.
CY7C1051DV33-10ZSXI by Infineon Technologies

CY7C1051DV33-10ZSXI

Infineon Technologies

Infineon's CY7C1051DV33-10ZSXI is a 512Kx16 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 10ns access time, and 44 terminals in a small outline package. Ideal for industrial applications requiring fast and reliable memory storage.
CY7C1612KV18-250BZXI by Cypress Semiconductor

CY7C1612KV18-250BZXI

Cypress Semiconductor

QDR II SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 800 mA;
IS62C1024AL-35TLI by Integrated Silicon Solution

IS62C1024AL-35TLI

Integrated Silicon Solution

IS62C1024AL-35TLI by Integrated Silicon Solution is a 128KX8 SRAM with 35 ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.
CY7C0832AV-133AI by Cypress Semiconductor

CY7C0832AV-133AI

Cypress Semiconductor

CY7C0832AV-133AI by Cypress is a 256KX18 SRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, common I/O type, and 4ns access time. Ideal for industrial applications requiring fast and reliable memory storage in a compact FLATPACK package.
DS1220Y-200IND by Maxim Integrated

DS1220Y-200IND

Maxim Integrated

DS1220Y-200IND by Maxim Integrated is a 2Kx8 SRAM module with 16384-bit memory density. It operates at 5V, has an access time of 200ns, and is designed for industrial applications. The package style is microelectronic assembly with dual terminal position and tin lead finish.
R1LP0408DSP-5SI#S0 by Renesas Electronics

R1LP0408DSP-5SI#S0

Renesas Electronics

Renesas Electronics' R1LP0408DSP-5SI#S0 is a 512Kx8 SRAM with 55ns access time, operating at 5V. It features a small outline package, 3-state output, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in industrial settings.
CY62167EV18LL-55BVXI by Infineon Technologies

CY62167EV18LL-55BVXI

Infineon Technologies

CY62167EV18LL-55BVXI by Infineon: 1MX16 SRAM with 55ns access time, operates at 1.8V, and has 3-STATE output. Ideal for industrial applications requiring high-speed memory with low standby current. Package style is grid array, very thin profile, fine pitch.
IS61LV5128AL-10TLI by Integrated Silicon Solution

IS61LV5128AL-10TLI

Integrated Silicon Solution

IS61LV5128AL-10TLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 10ns and is ideal for industrial applications requiring fast and reliable memory storage. The package style is small outline, thin profile, making it suitable for space-constrained designs.
CY7C1049GN30-10VXI by Infineon Technologies

CY7C1049GN30-10VXI

Infineon Technologies

CY7C1049GN30-10VXI by Infineon Technologies is a 512Kx8 SRAM with 3-STATE output, operating at 3V. It features an industrial temperature grade, parallel interface, and J BEND terminal form. Ideal for applications requiring fast access times and low standby current in industrial environments.
5962-9461110HMA by White Microelectronics

5962-9461110HMA

White Microelectronics

SRAM MODULE; Temperature Grade: MILITARY; No. of Terminals: 68; Package Code: QFP; Package Shape: SQUARE; Memory Density: 16777216 bit;
CY62256NLL-55SNXI by Alliance Memory

CY62256NLL-55SNXI

Alliance Memory

STANDARD SRAM; No. of Terminals: 28; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel; Package Style (Meter): SMALL OUTLINE;
CY62256NLL-70PXC by Cypress Semiconductor

CY62256NLL-70PXC

Cypress Semiconductor

CY62256NLL-70PXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a 3-STATE output and is ideal for applications requiring fast and reliable memory storage in commercial-grade devices. With a memory density of 262144 bits, it offers parallel data transfer with low standby current of 0.000005Amp.
IDT71024S15TYGI8 by Renesas Electronics

IDT71024S15TYGI8

Renesas Electronics

The Renesas Electronics IDT71024S15TYGI8 is a 128Kx8 SRAM with a 15ns access time, operating at 5V. It features a small outline package and offers 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.
CY14B104LA-ZS45XIT by Cypress Semiconductor

CY14B104LA-ZS45XIT

Cypress Semiconductor

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Equivalence Code: TSOP44,.46,32;
CY62148ESL-55ZAXIT by Cypress Semiconductor

CY62148ESL-55ZAXIT

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Density: 4194304 bit;
74F189PC by Rochester Electronics

74F189PC

Rochester Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
CY14V101NA-BA45XIT by Infineon Technologies

CY14V101NA-BA45XIT

Infineon Technologies

Infineon's CY14V101NA-BA45XIT is a 64Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features parallel technology, 45ns access time, and non-volatile memory type. Ideal for applications requiring fast and reliable data storage in harsh environments.
CY62157EV30LL-45ZXI by Infineon Technologies

CY62157EV30LL-45ZXI

Infineon Technologies

Infineon's CY62157EV30LL-45ZXI is a 512Kx16 SRAM with 3.3V supply, 45ns access time, and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in compact systems. Features include asynchronous operation, common I/O type, and 3-state output characteristics.